Silicon Carbide High Temperature Plate
Reference:
Manufacturer: Across International
Silicon Carbide High Temperature Plate
Silicon Carbide (SiC) plates
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SiC Content (%) | >99 |
Max temperature | 1650°C |
Density (g/cm³) | 2.65-2.75 |
Apparent Porosity (%) | <15 |
Bending Strength at Normal Temperature (20°C) (Mpa) | 90-100 |
Bending Strength at High Temperature (1200°C) (Mpa) | 100-110 |
Operating Temperature (°C) | ≤1650 |
Coefficient of Thermal Expansion (20-1200°C) (10⁻⁶/°C) | <4.8 |
Thermal Conductivity (1200°C) (W/M.K) | 35-36 |
Hardness (20°C) (KG/MM²) | 1800-2000 |
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